A 1 550 nm long-wavelength vertical cavity surface emitting laser (VCSEL) on InP substrate is designed and fabri-cated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn(1-x-y)As/InP, and 6 strain compensated AlxGayIn(1-x-y)As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection (DBR) mirror system has been formed by fabricat-ing 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW opera-tion at room temperature.

报道了基于绝缘体上硅材料的25通道、信道间隔200 GHz的阵列波导光栅, 分别优化了输入波导/输出波导/阵列波导间的最小间距 (Δxi/Δxo/d), 及其自由传播区和阵列波导之间边界结构 (W2/L2/L3).实验结果表明, 该阵列波导光栅的插入损耗为5~7 dB, 串扰为13~15 dB, 该阵列波导光栅的性能得到有效提升. 同时也提出了减小插损与串扰的进一步优化方案.

A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of ?13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon- on-insulator (SOI) substrate.

A 45-channel 100 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about ?23 dB. The device is fabricated on silicon-on-insulator (SOI) substrate by deep ultraviolet lithography (DUV) and inductively coupled plasma (ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of -8 dB.

We experimentally demonstrate an efficient enhancement of luminescence from two-dimensional (2D) hexagonal photonic crystal (PC) airbridge double-heterostructure microcavity with Er-doped silicon (Si) as light emitters on siliconon- insulator (SOI) wafer at room temperature. A single sharp resonant peak at 1 529.6 nm dominates the photoluminescence (PL) spectrum with the pumping power of 12.5 mW. The obvious red shift and the degraded quality factor (Q-factor) of resonant peak appear with the pumping power increasing, and the maximum measured Q-factor of 4 905 is achieved at the pumping power of 1.5 mW. The resonant peak is observed to shift depending on the structural parameters of PC, which indicates a possible method to control the wavelength of enhanced luminescence for Si-based light emitters based on PC microcavity.

According to the plasma dispersion effect of silicon (Si), a silicon-on-insulator (SOI) based variable optical attenuator (VOA) with p-i-n lateral diode structure is demonstrated in this paper. A wire rib waveguide with sub-micrometer cross section is adopted. The device is only about 2 mm long. The power consumption of the VOA is 76.3 mW (0.67 V, 113.9 mA), and due to the carrier absorption, the polarization dependent loss (PDL) is 0.1 dB at 20 dB attenuation. The raise time of the VOA is 34.5 ns, the fall time is 37 ns, and the response time is 71.5 ns.

垂直腔面发射激光器(VCSELs)在光纤通讯领域有着广泛的应用前景, 国际上对VCSELs需求逐年增加, 而国内目前VCSELs的产业化尚属空白。本文从两方面着手综述1 310 nm VCSELs制备方法。将可以制备出1 310 nm VCSELs的4种材料, 从理论、制备、量产时需要考虑的因素等方面进行较为全面的汇总分析; 同时对两种主流的制备方法从工艺步骤分析其在产业化方面的优势与不足。

阵列波导光栅的平坦化在实际应用中有很重要的意义.本文系统地研究了阵列波导光栅的平坦化.在输入波导、输出波导、阵列波导输入端与输出端上分别引入了指数型锥形波导.通过改变锥形波导的形状和尺寸来实现平坦化的优化.本文首先从理论上论述了引入指数型锥形波导的输出光谱特性, 给出了结构参量的关系表达式, 阐明了输入波导处的锥形波导是影响输出光谱平坦化的主要因素, 阵列波导和输出波导处的锥形波导对输出光谱的平坦化有一定的影响.其次采用数值模拟的方法模拟了输出光谱, 优化了结构参量, 总结出了指数型锥形波导对平坦化影响的趋势和规律.模拟结果显示, 输出光谱1 dB带宽大于通道间隔的50%, 插入损耗从5.2 dB减小到了4.0 dB, 串扰小于-30 dB.最后, 本文给出了实验结果, 插入损耗减小了0.87 dB, 串扰减小了3.67 dB, 1 dB带宽增加0.1 nm, 增加了54.7%.实验结果表明引入指数型锥形波导提高了阵列波导光栅器件的光谱性能.

设计和优化了一种新型低损耗、低偏振的基于二氧化硅的特种非对称1×5光分路器.在设计Y分支结构时, 输入端采用缓变展宽波导结构和直波导过渡波导相结合的结构, 此结构可以使输入光场缓慢展宽, 进行分束前的准备, 大大减小分支结构的辐射损耗和模式转换损耗.非对称1×5光分路器第一个端口输出功率占50%, 第二至五端口输出功率占50%.利用三维光束传播法模拟和优化了特种非对称1×5光分路器, 模拟结果表明, 该结构具有均匀性好、器件尺寸小、低损耗和低偏振等优点, 1×5光分路器在1 250~1 650 nm波长范围内, 第一个输出端口附加损耗小于0.07 dB, 均匀性小于0.023 dB, 偏振相关损耗小于0.009 dB, 第二到五端口附加损耗小于0.45 dB, 均匀性小于0.41 dB, 偏振相关损耗小于0.06 dB.

在InP阵列波导光栅的制作过程中会引入不同的误差, 从而影响器件的性能.为了最大限度地控制误差, 提高半导体器件性能, 本文采用传输函数法对InP基阵列波导光栅的系统误差和随机误差分别进行了分析.从系统误差的模拟结果中可以得到如下结论: 深脊型波导的有效折射率nc平均每偏移+0.000 1, 中心波长偏移+0.05nm.相邻阵列波导长度差ΔL每偏移+0.01 μm, 中心波长将偏移+0.44 nm.nc和ΔL仅仅会影响到传输谱中心通道及其他各通道对应的波长, 使得传输谱发生整体漂移, 而信道间隔及串扰不会改变.罗兰圆半径R偏移不会影响器件的中心通道对应的波长, 但会使其它通道对应的波长发生变化, 最终使得信道间隔改变, R增加50 μm, 信道间隔减小0.03 nm.从随机误差模拟结果中, 得出: 波导芯区折射率、上包层折射率、衬底折射率、波导宽度和波导芯层厚度的随机波动会对阵列波导光栅的串扰产生较大的影响.根据以上分析, 可以通过控制不同参量来调节器件的中心波长以及信道间隔等来优化阵列波导光栅的光学性能.